A performance Analysis of DM-DG and TM-DG TFETs Analytical Models for Low Power Applications

Abstract

Device Modeling is utilized to engendering incipient device models for the demeanor of the electrical devices predicated on fundamental physics. Modeling of the device may also include the creation of  Compact models. An emerging device type of transistor is the Tunnel Field-Effect transistor that achieves compactness and speed during device modeling. This article presents an analytical comparative study of duel material DG TFETs and triple Material DG TFETs with  gate oxide structure . Here the implementation of device modeling is done by solving Poisson’s equation with Parabolic Approximation Technique(PAT).The process of formulation of drain current(Id) model is based on  integrating the BTBT generation. A Transconductance model of the device is additionally developed utilizing this drain current model of TFET. Surface potential is calculated by utilizing the channel potential model. The electrical properties  like Surface potential〖(Ψ〗_(s,i)), Drain current (Id ), and Electric field(Ei)  have been compared for both Duel material DG-TFET and Triple material DG-TFET. The comparison statement of DMDG-TFETs and TMDG-TFETs provide improved performance. The analytical model of the device results are compared with simulated results for DMDG TFET and TMDG TFET and good acquiescent is examined.