Cd Content effects on the Performance of the MgZnO/CdZnO/ZnO Hetero structure
Main Article Content
Abstract
In this paper, we propose the performance improvement by inducing an increase in electric current by using a CdZnO space layer in the MgZnO/ZnOheterostructure. The polarization effect on 2DEG(two dimensional electric gas) in the MgZnO/CdZnO/ZnOheterostructure was theoretically investigated as a function of Cd content, and carrier confinement in this structure was found to be superior to that of the conventional MgZnO/ZnO HEMT(high electron mobility transistor) structure. Based on this, the performance change was observed by changing the Cd content of the space layer in the SILVACO simulation. As the Cd content increased, the electron density increased. As a result, it can be seen that the saturation drain current is proportional to the Cd content increase in the space layer.
Downloads
Metrics
Article Details
You are free to:
- Share — copy and redistribute the material in any medium or format for any purpose, even commercially.
- Adapt — remix, transform, and build upon the material for any purpose, even commercially.
- The licensor cannot revoke these freedoms as long as you follow the license terms.
Under the following terms:
- Attribution — You must give appropriate credit , provide a link to the license, and indicate if changes were made . You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
- No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.
Notices:
You do not have to comply with the license for elements of the material in the public domain or where your use is permitted by an applicable exception or limitation .
No warranties are given. The license may not give you all of the permissions necessary for your intended use. For example, other rights such as publicity, privacy, or moral rights may limit how you use the material.
